TENSOR DG Series
Cleaning Solutions for IC Manufacturing
TENSOR DG Series Products are aqueous detergents formulated to facilitate the removal of organic and inorganic films, combinations of films, particles and debris from the surface of the substrate. When the correct TENSOR DG Series Product is selected, corrosion/oxidation of films and/or interconnect structures is eliminated.
These products are designed to be diluted with water at levels between 2-5% resulting in extremely safe, economical and environmentally sensitive solutions to difficult cleaning problems.
TENSOR DG Series Products may be used in processes employing passivation rinses, brush cleaning, spray cleaning, ultrasonic and megasonic cleaning (heated or unheated). The products may be used in combination with existing cleans to make the process more robust.
TENSOR DG Series applications include post-CMP, passivation rinses, CMP buff, post–etch/ash cleaning, post–etch/ash rinsing, and wherever surfaces need to be cleaned or rinsed prior to the additional processing.
Characteristics
Product | pH @ 4% | Process Application | Suitable for Metal | Foam |
---|---|---|---|---|
DG 12 | 11.8 | Ultra/Megasonic | Barrier/Capacitor/ILD | High |
DG 12-LF | 12.0 | Ultra/Mega/Brush/Spray | Barrier/Capacitor/ILD | Low |
DG 12-LM | 11.5 | Ultra/Mega/Brush/Spray | Barrier/Capacitor/ILD | Low |
DG 10 | 10.2 | Ultra/Megasonic | Barrier/Capacitor/ILD | High |
DG 10-LF | 9.5 | Ultra/Mega/Brush/Spray | Barrier/Capacitor/ILD | Low |
DG 10-LM | 10.3 | Ultra/Mega/Brush/Spray | Barrier/Capacitor/ILD | Low |
DG 7 | 6.5 | Ultra/Megasonic | Cu/Al/W/ILD | High |
DG 7-LF | 7.4 | Ultra/Mega/Brush/Spray | Cu/Al/W/ILD | Low |
DG 7-LM | 5.9 | Ultra/Mega/Brush/Spray | Cu/Al/W/ILD | Low |
DG 7-Cu | 7.0 | Ultra/Mega/Brush/Spray | Cu/Al/W/ILD | Med |
DG 7-Al | 7.0 | Ultra/Mega/Brush/Spray | Cu/Al/W/ILD | Med |
DG 3 | 3.7 | Ultra/Megasonic | Cu/Al/W/ILD | High |
DG 3-LM | 3.4 | Ultra/Mega/Brush/Spray | Cu/Al/W/ILD | Low |
Directions
It is recommended that evaluation of TENSOR DG Series Products begin at a dilution
of 4% mixed with deionized (DI) water. The type and degree of residue to be removed
varies from process to process and these factors will ultimately determine specific use
instructions. Other factors to consider include wafer exposure time, temperature and
equipment.
Benefits:
Superior wetting ability and corrosion/oxidation inhibition
Free rinsing – leaves no film or residue
Fully compatible with metal interconnect structures and packaging
Safe and economical to use