Candeo Post-CMP Cleaning Chemistry

Candeo™ Post-CMP Cleaning Chemistry

Advanced Defect Reduction. Increased Yield. Proven Integration.

Candeo™ is IDI’s next-generation post-CMP cleaning chemistry, engineered to significantly reduce particle and ionic contamination for improved yield and device reliability.

Designed for seamless use on Entrepix DSS-200 cleaning platforms and validated through the Entrepix CMP Foundry, Candeo™ delivers superior performance compared to conventional ammonium hydroxide (NH₄OH) cleans—without the environmental and handling drawbacks.

Applications

  • Silicon and Silicon Carbide (SiC) CMP processes
  • Advanced packaging and device manufacturing

Key Benefits

Lower Defectivity, Higher Yield

  • Up to 50% reduction in post-CMP defectivity vs. NH₄OH
  • Effective removal of both particles and ionic contaminants
  • Supports tighter defect specifications for advanced devices

Increased Total Usable Area (TUA)

  • More good die per wafer
  • Reduced yield loss from residual contamination
  • Improved wafer-level consistency and performance

Expanded Process Window

  • Stable performance across a wider range of process conditions
  • Reduced sensitivity to variation
  • Improved wafer-to-wafer repeatability

Seamless Platform Integration

  • Optimized for Entrepix DSS-200 and OnTrak-based systems
  • Compatible with existing process flows
  • No requirement for brush or hardware changes

Accelerated Qualification & Adoption

  • Validated through Entrepix CMP Foundry real-world testing
  • Head-to-head benchmarking vs incumbent chemistries
  • Reduces customer risk and speeds process development

Environmentally Benign

  • Safe for discharge
  • No odor → improved fab environment
  • Reduced EHS burden vs traditional chemistries

Performance Highlights

INTERSURFACE DYNAMICS - Icon only - 2-color-66d3ab

Demonstrated ~50% reduction in PCMP defects (>0.2 µm) vs NH₄OH in foundry testing

INTERSURFACE DYNAMICS - Icon only - 2-color-66d3ab

Proven ability to run in the same tool configuration without modification

INTERSURFACE DYNAMICS - Icon only - 2-color-66d3ab

Effective removal of challenging contamination including Al₂O₃ particles and Al³⁺ ions

The Complete Solution: Chemistry + Platform + Validation

Candeo Post-CMP Cleaning Chemistry

Candeo™ by IDI

Advanced formulation targeting both particle and ionic contamination

Entrepix DSS-200

Entrepix DSS-200 Platform

Proven wafer cleaning performance with seamless integration

ENTREPIX - An Amtech Company

Entrepix CMP Foundry

Real-world process development, validation, and benchmarking

Result: Lower defectivity, higher TUA, and faster customer adoption

INTERSURFACE-DYNAMICS-An-Amtech-Company-320px
ENTREPIX - An Amtech Company

Why IDI + Entrepix

Amtech’s Semiconductor Fabrication Solutions (SFS) group uniquely combines chemistry, equipment, and process expertise to solve complex CMP cleaning challenges.

With Candeo™, Entrepix DSS-200 systems, and CMP Foundry validation capabilities, customers gain a fully integrated path from process development to high-volume manufacturing.

Maximize TUA. Minimize defects.

More Good Die. Less Risk.

Al2O3 Particle Removal

Candeo, in conjunction with the OnTrak DSS cleaning platform, is able to remove Al2O3 particles that are covalently bonded to the wafer surface.

Candeo Chemistry Delivers Significant Improvement in Al2O3 Particle Removal vs. Industry Standard Cleans

Al3+ Ion Contamination Reduction

Candeo’s Ability To Remove Al3+ Ions from Suspension Translates To Reduced On Wafer Alumina Contamination Levels.

Customers Reporting Significant Reduction in Residual Alumina Contamination on Wafers

PCMP Clean Performance for Silica Slurries

Head to head testing at Entrepix CMP Foundry demonstrates the performance benefits of Candeo vs NH4OH

Using Candeo results in a 50% reduction in PCMP defectivity vs. industry standard POR

Candeo™ vs. Conventional NH₄OH Post-CMP Cleaning Comparison

Performance comparison across key process metrics for semiconductor post-CMP cleaning applications.

Candeo™ (IDI) Conventional NH₄OH Clean
Defect Reduction ~50% lower post-CMP defects (>0.2 µm) in testing Baseline industry performance
Particle Removal Highly effective removal of difficult contaminants (incl. Al₂O₃ particles) Less effective on persistent or embedded particles
Ionic Contamination Strong removal of metal ions (e.g., Al³⁺) Limited ion removal efficiency
Total Usable Area (TUA) Increased TUA → more good die per wafer Lower TUA due to higher residual defectivity
Process Window Wide, stable, and forgiving process range Narrower process window, more sensitive to variation
Wafer-to-Wafer Consistency High repeatability and consistent results Greater variability depending on conditions
Tool Compatibility Drop-in compatible with DSS-200 / OnTrak systems; no hardware changes required Standard but often optimized around legacy processes
Integration Risk Low—validated through CMP Foundry head-to-head testing Established but may require tuning for advanced nodes
Qualification Speed Accelerated via real-world foundry validation and benchmarking Slower—typically requires internal process iteration
Environmental Profile Environmentally benign, safe for discharge, no odor (per your spec) Hazardous handling considerations; strong odor
EHS / Fab Environment Favorable—improved operator environment Higher EHS burden and handling requirements