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Semiconductor

Chemical Mechanical Polishing and Post-CMP Cleaning

Chemical mechanical polishing (CMP) for planarization enables the production of integrated circuits employing the current device design rules. CMP yields flat, consistent surfaces on which additional layers of interconnect structures and/or devices may be built. 

As IC design becomes more complex, and the size of the silicon on which they are built increases, the CMP process and its ability to yield uniform surfaces also becomes more difficult. Use of more complex materials for dielectrics, interconnect structures, liners and barriers makes the need for application-specific CMP slurries and additives critical.

Intersurface Dynamics has a full range of CMP slurries made from oxides of aluminum, cerium and zirconium.  The company also has numerous slurry additives which, when applied to a variety of metal schemes, help yield flat, defect-free features.

Removal of CMP slurries from the surface of the wafer after polishing provides yet another cleaning challenge.  Defects from particles, stains and corrosion can change the electrical characteristics of a material and cause device failure. Intersurface Dynamics, as a leading manufacturer of detergents for semiconductor materials, offers a broad range of post-CMP detergents designed for brush, spray or immersion processes.



Tensor AP Series
ALUMINA, CERIA AND ZIRCONIA SLURRIES FOR CMP PLANARIZATION


Tensor DG Series
CLEANING SOLUTIONS FOR IC MANUFACTURING


Tensor D-Rinse
ADDITIVE FOR HIGH PRESSURE PAD RINSE/WAFER DE-CHUCKING CYCLES


Tensor Clean/Rinse 3
DETERGENT FOR CLEANING CU AND BARRIER FILM COMPLEXES AND RESIDUE








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