ADDITIVE FOR HIGH PRESSURE PAD RINSE/WAFER DE-CHUCKING CYCLES
Tensor D-Rinse is a specially formulated additive designed for use in high-pressure pad rinse and wafer de-chucking systems of today’s CMP tools.
When added to the rinse water at concentrations between 10% and 25% Tensor D-Rinse will reduce light scratching produced during the high-pressure rinse/de-chucking cycle. Tensor D-Rinse will also facilitate removal of slurry chemistry, particles and pad residues, thus increasing the effectiveness of post-CMP (megasonic and brush) wafer cleaning processes. Tensor D-Rinse is formulated to eliminate corrosion/oxidation of metals that can occur during wafer transport to 2nd and 3rd phases as well as delayed transport to the cleaning station.
Superior wetting with low foam
Free rinsing – leaves no films or residue
Cleans residues left by any commercially available CMP slurries
Fully compatible with advanced metal schemes and associated dielectrics
Fully compatible with all industry standard CMP tools and pad rinsing/wafer de-chucking systems
Safe and economical to use
It is recommended that Tensor D-Rinse be added to the high-pressure water rinse line at 10% to 25%. The types of post-CMP residues, length of time under the spray, spray pressure, slurry chemistry and other process factors ultimately determine specific dilutions and methods of use.
Intersurface Dynamics manufactures 3 product lines, TENSOR, VECTOR and CHALLENGE Series Products. Visit our web site at www.isurface.com for more information.