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Chemical Mechanical Polishing and Post-CMP Cleaning >> Tensor D-Rinse

ADDITIVE FOR HIGH PRESSURE PAD RINSE/WAFER DE-CHUCKING CYCLES

Tensor D-Rinse is a specially formulated additive designed for use in high-pressure pad rinse and wafer de-chucking systems of today’s CMP tools.

When added to the rinse water at concentrations between 10% and 25% Tensor D-Rinse will reduce light scratching produced during the high-pressure rinse/de-chucking cycle. Tensor D-Rinse will also facilitate removal of slurry chemistry, particles and pad residues, thus increasing the effectiveness of post-CMP (megasonic and brush) wafer cleaning processes. Tensor D-Rinse is formulated to eliminate corrosion/oxidation of metals that can occur during wafer transport to 2nd and 3rd phases as well as delayed transport to the cleaning station.

Benefits:

  • Superior wetting with low foam
  • Free rinsing – leaves no films or residue
  • Cleans residues left by any commercially available CMP slurries
  • Fully compatible with advanced metal schemes and associated dielectrics
  • Fully compatible with all industry standard CMP tools and pad rinsing/wafer de-chucking systems
  • Easily implemented
  • Safe and economical to use

Directions:

It is recommended that Tensor D-Rinse be added to the high-pressure water rinse line at 10% to 25%. The types of post-CMP residues, length of time under the spray, spray pressure, slurry chemistry and other process factors ultimately determine specific dilutions and methods of use.

Additional Information:

Intersurface Dynamics manufactures 3 product lines, TENSOR, VECTOR and CHALLENGE Series Products. Visit our web site at www.isurface.com for more information.

 



 



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