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Patented Caustic Etching Additive
May 09, 2007
 

A new way to reduce surface roughness produced from caustic etching applicable to silicon wafer producers, MEMS manufactures and solar wafer makers. Intersurface Dynamics is proud to announce that it has recently been awarded patent 7,192,886 by the USPTO for an invention titled “Method of using additives in caustic etching of silicon for obtaining improved surface characteristics”.

 

Caustic etching produces silicon surfaces with large facet sizes and rough surfaces. Through the use of this simply applied patented technology, Si surfaces can be changed.  Used typically with KOH, the new etched silicon surface will yield smaller facets sizes and lower surface roughness.

 

Further information may be obtained by reviewing the above listed patent at the USPTO web site (www.uspto.gov).

 

Interest into licensing the patent may be expressed to jonwolk@isurface.com.

 
 
 
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